High Electron-Mobility Transistor is a type of field effect transistor. It uses an exceptionally narrow channel empowering it to work at extremely high frequencies. It includes a junction between two materials with various band gaps as the channel rather than a doped region. HEMTs are utilized in integrated circuits as digital on-off switches. HEMT transistors can work at higher frequencies than normal transistors, up to millimeter wave frequencies, and are utilized in high-recurrence products.